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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Showing results 1 to 4 of 4

Article

A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 Gate Stack nMOSFETsSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 88, no. 12, page. 3411 - 3414, 2011-12

Article

A new physical 1/f noise model for double stack high-k gate dielectric MOSFETsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 30, no. 12, page. 1365 - 1367, 2009-12

Article

Fabrication of a bionic superhydrophobic metal surface by sulfur-induced morphological developmentSCIESCOPUS

JOURNAL OF MATERIALS CHEMISTRY, vol. 15, no. 30, page. 3089 - 3092, 2005-01

Article

Junction depth dependence of the gate induced drain leakage in shallow junction source/drain-extension nano-CMOSSCIESCOPUS

IEICE TRANSACTIONS ON ELECTRONICS, vol. E91-C, no. 5, page. 761 - 766, 2008-05

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