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Conference
A low-resistance Pd/Ge/Ti/Au ohmic contact to a high-low doped GaAs field-effect transistor

, 1996-01

Article
CHARACTERIZATION AND REMOVAL OF SILICON SURFACE RESIDUE RESULTING FROM CHF3/C2F6 REACTIVE ION ETCHINGSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 76, no. 8, page. 4596 - 4602, 1994-10-15

Article
INVESTIGATION ON THE INTERFACIAL REACTION OF SIO2/TI0.1W0.9 SYSTEMSCIESCOPUS

JOURNAL OF NON-CRYSTALLINE SOLIDS, vol. 187, page. 149 - 155, 1995-07

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