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Showing results 1 to 6 of 6
Conference
Defect Engineering을 통한 TiN/H0.5Z0.5O2/TiN 커패시터의 Wake-up Effect와 강유전성 개선

제 28회 한국반도체학술대회, 2021-01-25

Conference
Effects of High-pressure Hydrogen Annealing on the Ferroelectric Properties of W/Al:HfO2/W Stacks

The 27th Korean Conference on Semiconductors / 제 27회 한국반도체학술대회, 2020-02-14

Conference
Excellent Switching Performances of TiON/HZO/MoS2 Ferroelectric Diode

The Non-Volatile Memory Technology Symposium, 2022-12-08

Article
HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic ApplicationsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 38, no. 6, page. 732 - 735, 2017-06

Article
RRAM-based synapse devices for neuromorphic systemsSCIESCOPUS

FARADAY DISCUSSIONS, vol. 213, page. 421 - 451, 2019-02

Conference
Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering

The Non-Volatile Memory Technology Symposium, 2022-12-08

1
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