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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Article

A. 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensorSCIESCOPUS

IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 38, no. 4, page. 631 - 640, 2003-04

Article

CHARGE-TRANSFERRED PRESENSING, NEGATIVELY PRECHARGED WORD-LINE, AND TEMPERATURE-INSENSITIVE POWER-UP SCHEMES FOR LOW-VOLTAGE DRAMSSCIESCOPUS

IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 39, no. 4, page. 694 - 703, 2004-04

Article

Offset-compensated direct sensing and charge-recycled precharge schemes for sub-1.0 V high-speed DRAM'sSCIESCOPUS

IEICE TRANSACTIONS ON ELECTRONICS, vol. E87C, no. 5, page. 801 - 808, 2004-05

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