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Showing results 7 to 10 of 10
Article
RF capacitance extraction utilizing a series resistance deembedding scheme for ultraleaky MOS devicesSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 29, no. 3, page. 238 - 241, 2008-03

Article
The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 31, no. 10, page. 1104 - 1106, 2010-10

Article
The efficient resolution of protected diols and hydroxy aldehydes by lipases: Steric auxiliary approach and synthetic applications.SCIESCOPUS

BIOORGANIC & MEDICINAL CHEMISTRY LETTERS, vol. 6, no. 1, page. 71 - 76, 1996-01-09

Article
Thirty-five-nm T-Gate In0.52Al0.48As/In0.53Ga0.47As Metamorphic HEMTs with an Ultrahigh f(max) of 610 GHzSCIESCOPUSKCI

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 56, no. 1, page. 133 - 136, 2010-01

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