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PARK, CHAN GYUNG(박찬경)

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

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Author : Kim, HS Date Issued : [2003 TO 2009] Date Issued : 2004

Article

Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealingSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 96, no. 10, page. 5496 - 5499, 2004-11-15

Article

Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxySCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 96, no. 8, page. 4122 - 4125, 2004-10-15

Article

A study on doping density in InAs/GaAs quantum dot infrared photodetectorSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 43, no. 8A, page. 5199 - 5203, 2004-08

Article

Effects of neutralizers on the crystal orientation of YSZ films grown by using ion beam sputteringSCIESCOPUS

VACUUM, vol. 74, no. 3-4, page. 423 - 430, 2004-06-07

Article

Electrical properties of electrical double layer capacitors with integrated carbon nanotube electrodesSCIESCOPUS

CHEMICAL PHYSICS LETTERS, vol. 388, no. 1-3, page. 170 - 174, 2004-04-11

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