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Author : Rhee, SW

Article

Photoelectrochemical Hydrogen Generation Using C-dot/ZnO Hierarchical Nanostructure as an Efficient PhotoanodeSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 162, no. 6, page. 366 - 370, 2015-03

Article

Low-Voltage Bendable Pentacene Thin-Film Transistor with Stainless Steel Substrate and Polystyrene-Coated Hafnium Silicate DielectricSCIESCOPUS

ACS Applied Materials & Interfaces, vol. 4, no. 4, page. 2025 - 2032, 2012-04

Article

In situ ultraviolet photoemission spectroscopy measurement of the pentacene-RuO2/Ti contact energy structureSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 97, no. 7, 2010-08-16

Article

The fabrication of highly uniform ZnO/CdS core/shell structures using a spin-coating-based successive ion layer adsorption and reaction methodSCIESCOPUS

NANOTECHNOLOGY, vol. 21, no. 32, 2010-08-13

Article

Atomic layer deposition of hafnium silicate film for high mobility pentacene thin film transistor applicationsSCIESCOPUS

JOURNAL OF MATERIALS CHEMISTRY, vol. 19, no. 37, page. 6857 - 6864, 2009-07

Article

Enhanced mass sensitivity of ZnO nanorod-grown quartz crystal microbalancesSCIESCOPUS

SENSORS AND ACTUATORS B-CHEMICAL, vol. 135, no. 2, page. 444 - 448, 2009-01-15

Article

Resistance switching behaviors of hafnium oxide films grown by MOCVD for nonvolatile memory applicationsSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 155, no. 2, page. H92 - H96, 2008-01

Article

Thermal stability of chemical vapor deposition grown W and WNx thin films in low-k integration structureSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 24, no. 3, page. 1428 - 1431, 2006-05

Article

PrefaceSCIESCOPUS

Thin Solid Films, vol. 409, no. 1, page. vii - vii, 2002-04-22

Article

Precursors for deposition of strontium bismuth tantalate films by direct liquid injection-metallorganic chemical vapor depositionSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 149, no. 1, page. C44 - C49, 2002-01

Article

Direct liquid injection metallorganic chemical vapor deposition of ZrO2 thin films using Zr(dmae)(4) as a novel precursorSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 149, no. 1, page. C23 - C27, 2002-01

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