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HWANG, HYUNSANG(황현상) scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-6 of 6 (Search time: 0.001 seconds).

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Subject : DEVICES

Article

Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2.7 stoichiometry with high ion diffusivitySCIESCOPUS

NANOTECHNOLOGY, vol. 31, no. 23, 2020-03

Article

Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping StrategySCIESCOPUS

Advanced Electronic Materials, vol. 4, no. 11, page. 1800360, 2018-11

Article

Reliable Multivalued Conductance States in TaOx, Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy AnalysisSCIESCOPUS

ACS Applied Materials and Interfaces, vol. 10, no. 35, page. 29757 - 29765, 2018-09

Article

In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interfaceSCIESCOPUS

Nanoscale, vol. 9, no. 2, page. 582 - 593, 2017-01

Article

Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic SystemsSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 63, no. 12, page. 5064 - 5067, 2016-12

Article

Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructureSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 100, no. 11, 2012-03-12

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