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HWANG, HYUNSANG(황현상)
scopus
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Dept of Materials Science & Engineering(신소재공학과)
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2018
1
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Article
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ATOMIC SWITCH
1
conduction mechanisms
1
DEVICES
1
ELECTRODES
1
ELECTROLYTES
1
GE2SB2TE5 FILMS
1
GexSbxTey
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MECHANISMS
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nitrogen doping
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phase change materials
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: conduction mechanisms
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Article
Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy
SCIE
SCOPUS
Advanced Electronic Materials, vol. 4, no. 11, page. 1800360, 2018-11
Raeis-Hosseini, Niloufar
;
Lim, Seokjae
;
HWANG, HYUNSANG
;
RHO, JUNSUK
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