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HWANG, HYUNSANG(황현상)
scopus
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Dept of Materials Science & Engineering(신소재공학과)
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Publication & Time Cited Count (For the Last 5 years)
Results 1-1 of 1 (Search time: 0.001 seconds).
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Date issued
2018
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Article
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Classification (of information)
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Conductive-bridging RAM (CBRAM)
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conductive-bridging RAM (CBRAM)
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Device engineering
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Inherent characteristics
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Ion injection
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linear conductance
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MEMORY
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Metal ions
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: Classification (of information)
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: conductive-bridging RAM (CBRAM)
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Article
Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems
SCIE
SCOPUS
IEEE ELECTRON DEVICE LETTERS, vol. 39, no. 2, page. 312 - 315, 2018-02
Lim, Seokjae
;
Sung, Changhyuck
;
Kim, Hyungjun
;
Kim, Taesu
;
Song, Jeonghwan
;
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