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LEE, JONG LAM(이종람) researcherid scopus
Department
Dept of Materials Science & Engineering(신소재공학과)
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    Publication & Time Cited Count (For the Last 5 years)

    Results 1-3 of 3 (Search time: 0.001 seconds).
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    Subject : LAYER Subject : GE
    Article
    AlGaAs/InGaAs pseudomorphic high electron mobility transistor using Pd/Ge ohmic contactSCIESCOPUS

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 40, no. 3A, page. 1188 - 1193, 2001-03

    Article
    Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistorSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 74, no. 19, page. 2866 - 2868, 1999-05-10

    Article
    Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistorSCIESCOPUS

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 16, no. 5, page. 2725 - 2728, 1998-09

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