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LEE, JONG LAM(이종람) researcherid scopus
Department
Dept of Materials Science & Engineering(신소재공학과)
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    Publication & Time Cited Count (For the Last 5 years)

    Results 1-8 of 8 (Search time: 0.001 seconds).
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    Subject : GE
    Article
    AlGaAs/InGaAs pseudomorphic high electron mobility transistor using Pd/Ge ohmic contactSCIESCOPUS

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 40, no. 3A, page. 1188 - 1193, 2001-03

    Article
    Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistorSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 74, no. 19, page. 2866 - 2868, 1999-05-10

    Article
    Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistorSCIESCOPUS

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 16, no. 5, page. 2725 - 2728, 1998-09

    Article
    Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to pseudomorphic high electron mobility transistor with undoped cap layerSCIESCOPUS

    JOURNAL OF APPLIED PHYSICS, vol. 84, no. 2, page. 911 - 917, 1998-07-15

    Article
    Evidence for the formation of n(+)-GaAs layer in Pd/Ge ohmic contact to n-type GaAsSCIESCOPUS

    JOURNAL OF APPLIED PHYSICS, vol. 82, no. 11, page. 5460 - 5464, 1997-12-01

    Article
    A low-resistance Pd/Ge/Ti/Au ohmic contact to a high-low doped GaAs field-effect transistorSCIESCOPUS

    THIN SOLID FILMS, vol. 290, page. 497 - 502, 1996-12-15

    Article
    MICROSTRUCTURAL AND ELECTRICAL INVESTIGATIONS OF PD/GE/TI/AU OHMIC CONTACT TO N-TYPE GAASSCIESCOPUS

    JOURNAL OF APPLIED PHYSICS, vol. 80, no. 7, page. 3904 - 3909, 1996-10-01

    Article
    Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAsSCIESCOPUS

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 35, no. 7, page. 3841 - 3844, 1996-07

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