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LEE, JONG LAM(이종람)
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Dept of Materials Science & Engineering(신소재공학과)
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Publication & Time Cited Count (For the Last 5 years)
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1996
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Article
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: [1996 TO 1999]
Date Issued
: 1996
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Article
A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications
SCIE
SCOPUS
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 43, no. 4, page. 519 - 526, 1996-04
Lee, JL
;
Mun, JK
;
Kim, H
;
Lee, JJ
;
Park, HM
1
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