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KANG, BONG KOO(강봉구)

Department: Dept of Electrical Engineering(전자전기공학과)

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Date Issued : 2012

Article

Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETsSCIESCOPUS

Microelectronics Reliability, vol. 52, no. 9, page. 1905 - 1908, 2012-09

Article

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stressSCIESCOPUS

Microelectronics Reliability, vol. 52, no. 9-10, page. 1901 - 1904, 2012-09

Article

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETsSCIESCOPUS

Microelectronics Reliability, vol. 52, no. 9-10, page. 1949 - 1952, 2012-09

Article

Modified SEPIC having enhanced power conversion efficiencySCIESCOPUS

Electronics Letters, vol. 48, no. 18, page. 1151 - U186, 2012-08-30

Article

Improvement of Power-Conversion Efficiency of a DC–DC Boost Converter Using a Passive Snubber CircuitSCIESCOPUS

IEEE Transactions on Industrial Electronics, vol. 59, no. 4, page. 1808 - 1814, 2012-04

Article

Measurement of mechanical stresses induced by hybrid shallow-trench-isolation for dynamic random access memory using recess channel array transistor structureSCIESCOPUS

Microelectronic Engineering, vol. 91, page. 44 - 49, 2012-03

Article

Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate StacksSCIESCOPUS

Japanese Journal of Applied Physics, vol. 51, no. 2, 2012-02

Article

Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFETSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 2, page. 137 - 139, 2012-02

Article

Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal--Oxide--Semiconductor Inverter at Elevated TemperatureSCIESCOPUS

Japanese Journal of Applied Physics, vol. 51, no. 2, 2012-02

Article

Biased scan of plasma display panel for data voltage reductionSCIESCOPUS

DISPLAYS, vol. 33, no. 1, page. 21 - 27, 2012-01

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