DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sung, SJ | - |
dc.contributor.author | Lee, PR | - |
dc.contributor.author | Kim, JG | - |
dc.contributor.author | Ryu, MT | - |
dc.contributor.author | Park, HM | - |
dc.contributor.author | Chung, JW | - |
dc.date.accessioned | 2015-06-25T01:30:52Z | - |
dc.date.available | 2015-06-25T01:30:52Z | - |
dc.date.created | 2015-02-04 | - |
dc.date.issued | 2014-08-25 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000031048 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9791 | - |
dc.description.abstract | Despite the noble electronic properties of graphene, its industrial application has been hindered mainly by the absence of a stable means of producing a band gap at the Dirac point (DP). We report a new route to open a band gap (E-g) at DP in a controlled way by depositing positively charged Na+ ions on single layer graphene formed on 6H-SiC(0001) surface. The doping of low energy Na+ ions is found to deplete the pi* band of graphene above the DP, and simultaneously shift the DP downward away from Fermi energy indicating the opening of E-g. The band gap increases with increasing Na+ coverage with a maximum E-g >= 0: 70 eV. Our core-level data, C 1s, Na 2p, and Si 2p, consistently suggest that Na+ ions do not intercalate through graphene, but produce a significant charge asymmetry among the carbon atoms of graphene to cause the opening of a band gap. We thus provide a reliable way of producing and tuning the band gap of graphene by using Na+ ions, which may play a vital role in utilizing graphene in future nano-electronic devices. (C) 2014 AIP Publishing LLC. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Band gap engineering for graphene by using Na+ ions | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | en_US |
dc.identifier.doi | 10.1063/1.4893993 | - |
dc.author.google | Sung, SJ | en_US |
dc.author.google | Lee, PR | en_US |
dc.author.google | Chung, JW | en_US |
dc.author.google | Park, HM | en_US |
dc.author.google | Ryu, MT | en_US |
dc.author.google | Kim, JG | en_US |
dc.relation.volume | 105 | en_US |
dc.relation.issue | 8 | en_US |
dc.contributor.id | 10052578 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.105, no.8 | - |
dc.identifier.wosid | 000342753500020 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 8 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 105 | - |
dc.contributor.affiliatedAuthor | Chung, JW | - |
dc.identifier.scopusid | 2-s2.0-84907341924 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.description.scptc | 8 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | EPITAXIAL GRAPHENE | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | INTERCALATION | - |
dc.subject.keywordPlus | NANORIBBONS | - |
dc.subject.keywordPlus | ADSORPTION | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | WAFER | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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