DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, DS | - |
dc.contributor.author | Tae Kyu An | - |
dc.contributor.author | Park, CE | - |
dc.contributor.author | Yun, HJ | - |
dc.contributor.author | Kwon, SK | - |
dc.contributor.author | Kim, YH | - |
dc.date.accessioned | 2015-06-25T01:27:44Z | - |
dc.date.available | 2015-06-25T01:27:44Z | - |
dc.date.created | 2013-04-15 | - |
dc.date.issued | 2012-11-05 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000027519 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9740 | - |
dc.description.abstract | A high-quality organic single crystal transistor (OSCT) was fabricated via solution-processing using a novel anthracene derivative (TIPsAntNE). The OSCT fabricated on a surface-modified high-capacitance ZrOx substrate provided a transistor that operated at low voltages with a high mobility up to 4.1 cm(2)/Vs and negligible hysteresis (a V-th shift of <20mV). Importantly, the TIPsAntNE OSCT functioned under a high-frequency AC signal with a gate bias as high as 30 kHz. These are crucial operational requirements for commercial applications of organic transistors. The photoresponsivity (>1 A/W) of the TIPsAntNE single crystal was high over a wide range across the visible spectrum. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764062] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | High-speed solution-processed organic single crystal transistors using a novel triisopropylsilylethynyl anthracene derivative | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.4764062 | - |
dc.author.google | Chung, DS | en_US |
dc.author.google | An, TK | en_US |
dc.author.google | Kim, YH | en_US |
dc.author.google | Kwon, SK | en_US |
dc.author.google | Yun, HJ | en_US |
dc.author.google | Park, CE | en_US |
dc.relation.volume | 101 | en_US |
dc.relation.issue | 19 | en_US |
dc.relation.startpage | 4764062-1 | en_US |
dc.relation.lastpage | 4764062-4 | en_US |
dc.contributor.id | 10104044 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.101, no.19, pp.4764062-1 - 4764062-4 | - |
dc.identifier.wosid | 000311320100061 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 4764062-4 | - |
dc.citation.number | 19 | - |
dc.citation.startPage | 4764062-1 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 101 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84869067977 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 10 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | high-frequency effects | - |
dc.subject.keywordAuthor | organic semiconductors | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | transistors | - |
dc.subject.keywordAuthor | visible spectra | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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