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Cited 9 time in webofscience Cited 14 time in scopus
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dc.contributor.authorChung, DS-
dc.contributor.authorTae Kyu An-
dc.contributor.authorPark, CE-
dc.contributor.authorYun, HJ-
dc.contributor.authorKwon, SK-
dc.contributor.authorKim, YH-
dc.date.accessioned2015-06-25T01:27:44Z-
dc.date.available2015-06-25T01:27:44Z-
dc.date.created2013-04-15-
dc.date.issued2012-11-05-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000027519en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9740-
dc.description.abstractA high-quality organic single crystal transistor (OSCT) was fabricated via solution-processing using a novel anthracene derivative (TIPsAntNE). The OSCT fabricated on a surface-modified high-capacitance ZrOx substrate provided a transistor that operated at low voltages with a high mobility up to 4.1 cm(2)/Vs and negligible hysteresis (a V-th shift of <20mV). Importantly, the TIPsAntNE OSCT functioned under a high-frequency AC signal with a gate bias as high as 30 kHz. These are crucial operational requirements for commercial applications of organic transistors. The photoresponsivity (>1 A/W) of the TIPsAntNE single crystal was high over a wide range across the visible spectrum. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764062]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleHigh-speed solution-processed organic single crystal transistors using a novel triisopropylsilylethynyl anthracene derivative-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.4764062-
dc.author.googleChung, DSen_US
dc.author.googleAn, TKen_US
dc.author.googleKim, YHen_US
dc.author.googleKwon, SKen_US
dc.author.googleYun, HJen_US
dc.author.googlePark, CEen_US
dc.relation.volume101en_US
dc.relation.issue19en_US
dc.relation.startpage4764062-1en_US
dc.relation.lastpage4764062-4en_US
dc.contributor.id10104044en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.101, no.19, pp.4764062-1 - 4764062-4-
dc.identifier.wosid000311320100061-
dc.date.tcdate2019-01-01-
dc.citation.endPage4764062-4-
dc.citation.number19-
dc.citation.startPage4764062-1-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume101-
dc.contributor.affiliatedAuthorPark, CE-
dc.identifier.scopusid2-s2.0-84869067977-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc6-
dc.description.scptc10*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusPHOTODETECTORS-
dc.subject.keywordPlusDIELECTRICS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordAuthorhigh-frequency effects-
dc.subject.keywordAuthororganic semiconductors-
dc.subject.keywordAuthorthin film transistors-
dc.subject.keywordAuthortransistors-
dc.subject.keywordAuthorvisible spectra-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
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