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Cited 13 time in webofscience Cited 10 time in scopus
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dc.contributor.authorKi, DK-
dc.contributor.authorJo, S-
dc.contributor.authorLee, HJ-
dc.date.accessioned2015-06-25T01:24:20Z-
dc.date.available2015-06-25T01:24:20Z-
dc.date.created2009-08-21-
dc.date.issued2009-04-20-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000017324en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9684-
dc.description.abstractIn this study, we determined the chiral direction of the quantum-Hall (QH) edge states in graphene by adopting simple two-terminal conductance measurements while grounding different edge positions of the sample. The edge state with a smaller filling factor is found to more strongly interact with the electric contacts. This simple method can be conveniently used to investigate the chirality of the QH edge state with zero filling factor in graphene, which is important to understand the symmetry breaking sequence in high magnetic fields (greater than or similar to 25 T).-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleObservation of chiral quantum-Hall edge states in graphene-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1063/1.3123265-
dc.author.googleKi, DKen_US
dc.author.googleJo, Sen_US
dc.author.googleLee, HJen_US
dc.relation.volume94en_US
dc.relation.issue16en_US
dc.relation.startpage162113en_US
dc.relation.lastpage162113en_US
dc.contributor.id10080084en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.94, no.16, pp.162113 - 162113-
dc.identifier.wosid000265823300037-
dc.date.tcdate2019-01-01-
dc.citation.endPage162113-
dc.citation.number16-
dc.citation.startPage162113-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume94-
dc.contributor.affiliatedAuthorLee, HJ-
dc.identifier.scopusid2-s2.0-65449163432-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc10-
dc.description.scptc10*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordAuthorcontact resistance-
dc.subject.keywordAuthorelectrical contacts-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthorquantum Hall effect-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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