Article
Cited 118 time in 
Cited 165 time in 
Cited 165 time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Xu, JR | - |
| dc.contributor.author | Schubert, MF | - |
| dc.contributor.author | Noemaun, AN | - |
| dc.contributor.author | Zhu, D | - |
| dc.contributor.author | Kim, JK | - |
| dc.contributor.author | Schubert, EF | - |
| dc.contributor.author | Kim, MH | - |
| dc.contributor.author | Chung, HJ | - |
| dc.contributor.author | Yoon, S | - |
| dc.contributor.author | Sone, C | - |
| dc.contributor.author | Park, Y | - |
| dc.date.accessioned | 2015-06-25T01:23:54Z | - |
| dc.date.available | 2015-06-25T01:23:54Z | - |
| dc.date.created | 2009-09-03 | - |
| dc.date.issued | 2009-01-05 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000018605 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9677 | - |
| dc.description.abstract | Blue light-emitting diodes (LEDs) with polarization-matched GaInN/GaInN multi-quantum-well (MQW) active regions are grown by metal-organic vapor-phase epitaxy. The GaInN/GaInN MQW structure reduces the magnitude of polarization sheet charges at heterointerfaces in the active region. The GaInN/GaInN MQW LEDs are shown to have enhanced light-output power, reduced efficiency droop, a lower forward voltage, a smaller diode ideality factor, and decreased wavelength shift, compared with conventional GaInN/GaN MQW LEDs. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | REDUCTION IN EFFICIENCY DROOP, FORWARD VOLTAGE, IDEALITY FACTOR, AND WAVELENGTH SHIFT IN POLARIZATION-MATCHED GAINN/GAINN MULTI-QUANTUM-WELL LIGHT-EMITTING DIODES | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.3058687 | - |
| dc.author.google | Xu, JR | en_US |
| dc.author.google | Schubert, MF | en_US |
| dc.author.google | Park, Y | en_US |
| dc.author.google | Sone, C | en_US |
| dc.author.google | Yoon, S | en_US |
| dc.author.google | Chung, HJ | en_US |
| dc.author.google | Kim, MH | en_US |
| dc.author.google | Schubert, EF | en_US |
| dc.author.google | Kim, JK | en_US |
| dc.author.google | Zhu, D | en_US |
| dc.author.google | Noemaun, AN | en_US |
| dc.relation.volume | 94 | en_US |
| dc.relation.issue | 1 | en_US |
| dc.relation.startpage | 11113 | en_US |
| dc.relation.lastpage | 11113 | en_US |
| dc.contributor.id | 10100864 | en_US |
| dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.94, no.1, pp.11113 - 11113 | - |
| dc.identifier.wosid | 000262357800013 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 11113 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 11113 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 94 | - |
| dc.contributor.affiliatedAuthor | Kim, JK | - |
| dc.identifier.scopusid | 2-s2.0-58149492901 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 99 | - |
| dc.description.scptc | 131 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | gallium compounds | - |
| dc.subject.keywordAuthor | III-V semiconductors | - |
| dc.subject.keywordAuthor | indium compounds | - |
| dc.subject.keywordAuthor | light emitting diodes | - |
| dc.subject.keywordAuthor | semiconductor heterojunctions | - |
| dc.subject.keywordAuthor | semiconductor quantum wells | - |
| dc.subject.keywordAuthor | vapour phase epitaxial growth | - |
| dc.subject.keywordAuthor | wide band gap semiconductors | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 김종규KIM, JONG KYU
- Dept of Materials Science & Enginrg