DC Field | Value | Language |
---|---|---|
dc.contributor.author | Schubert, MF | - |
dc.contributor.author | Chhajed, S | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Schubert, EF | - |
dc.contributor.author | Koleske, DD | - |
dc.contributor.author | Crawford, MH | - |
dc.contributor.author | Lee, SR | - |
dc.contributor.author | Fischer, AJ | - |
dc.contributor.author | Thaler, G | - |
dc.contributor.author | Banas, MA | - |
dc.date.accessioned | 2015-06-25T01:16:06Z | - |
dc.date.available | 2015-06-25T01:16:06Z | - |
dc.date.created | 2009-09-04 | - |
dc.date.issued | 2007-12-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000018670 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9557 | - |
dc.description.abstract | Measurements of light-output power versus current are performed for GaInN/GaN light-emitting diodes grown on GaN-on-sapphire templates with different threading dislocation densities. Low-defect-density devices exhibit a pronounced efficiency peak followed by droop as current increases, whereas high-defect-density devices show low peak efficiencies and little droop. The experimental data are analyzed with a rate equation model to explain this effect. Analysis reveals that dislocations do not strongly impact high-current performance; instead they contribute to increased nonradiative recombination at lower currents and a suppression of peak efficiency. The characteristics of the dominant recombination mechanism at high currents are consistent with processes involving carrier leakage. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2822442 | - |
dc.author.google | Schubert, MF | en_US |
dc.author.google | Chhajed, S | en_US |
dc.author.google | Banas, MA | en_US |
dc.author.google | Thaler, G | en_US |
dc.author.google | Fischer, AJ | en_US |
dc.author.google | Lee, SR | en_US |
dc.author.google | Crawford, MH | en_US |
dc.author.google | Koleske, DD | en_US |
dc.author.google | Schubert, EF | en_US |
dc.author.google | Kim, JK | en_US |
dc.relation.volume | 91 | en_US |
dc.relation.issue | 23 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.91, no.23 | - |
dc.identifier.wosid | 000251450600014 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 23 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 91 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-36849016286 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 248 | - |
dc.description.scptc | 285 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | QUANTUM EFFICIENCY | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordPlus | GAN | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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