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Cited 316 time in webofscience Cited 375 time in scopus
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dc.contributor.authorSchubert, MF-
dc.contributor.authorChhajed, S-
dc.contributor.authorKim, JK-
dc.contributor.authorSchubert, EF-
dc.contributor.authorKoleske, DD-
dc.contributor.authorCrawford, MH-
dc.contributor.authorLee, SR-
dc.contributor.authorFischer, AJ-
dc.contributor.authorThaler, G-
dc.contributor.authorBanas, MA-
dc.date.accessioned2015-06-25T01:16:06Z-
dc.date.available2015-06-25T01:16:06Z-
dc.date.created2009-09-04-
dc.date.issued2007-12-03-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000018670en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9557-
dc.description.abstractMeasurements of light-output power versus current are performed for GaInN/GaN light-emitting diodes grown on GaN-on-sapphire templates with different threading dislocation densities. Low-defect-density devices exhibit a pronounced efficiency peak followed by droop as current increases, whereas high-defect-density devices show low peak efficiencies and little droop. The experimental data are analyzed with a rate equation model to explain this effect. Analysis reveals that dislocations do not strongly impact high-current performance; instead they contribute to increased nonradiative recombination at lower currents and a suppression of peak efficiency. The characteristics of the dominant recombination mechanism at high currents are consistent with processes involving carrier leakage.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleEffect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.2822442-
dc.author.googleSchubert, MFen_US
dc.author.googleChhajed, Sen_US
dc.author.googleBanas, MAen_US
dc.author.googleThaler, Gen_US
dc.author.googleFischer, AJen_US
dc.author.googleLee, SRen_US
dc.author.googleCrawford, MHen_US
dc.author.googleKoleske, DDen_US
dc.author.googleSchubert, EFen_US
dc.author.googleKim, JKen_US
dc.relation.volume91en_US
dc.relation.issue23en_US
dc.contributor.id10100864en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.91, no.23-
dc.identifier.wosid000251450600014-
dc.date.tcdate2019-01-01-
dc.citation.number23-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume91-
dc.contributor.affiliatedAuthorKim, JK-
dc.identifier.scopusid2-s2.0-36849016286-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc248-
dc.description.scptc285*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusQUANTUM EFFICIENCY-
dc.subject.keywordPlusLEDS-
dc.subject.keywordPlusGAN-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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