Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with Al-based omnidirectional reflector having NiZn/Ag microcontacts
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SCOPUS
- Title
- Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with Al-based omnidirectional reflector having NiZn/Ag microcontacts
- Authors
- Kim, JK; Xi, JQ; Luo, H; Schubert, EF; Cho, J; Sone, C; Park, Y
- Date Issued
- 2006-10-02
- Publisher
- AMER INST PHYSICS
- Abstract
- Enhancement of light extraction in a GaInN near-ultraviolet light-emitting diode (LED) employing an Al-based omnidirectional reflector (ODR) consisting of GaN, a SiO2 low-refractive-index layer perforated by an array of NiZn/Ag microcontacts, and an Al layer is presented. A theoretical calculation reveals that a SiO2/Al ODR has much higher reflectivity than both a SiO2/Ag ODR and a Ag reflector at a wavelength of 400 nm. It is experimentally shown that GaInN near-ultraviolet LEDs with GaN/SiO2/Al ODR have 16% and 38% higher light output than LEDs with SiO2/Ag ODR and Ag reflector, respectively. The higher light output is attributed to enhanced reflectivity of the Al-based ODR in the near-ultraviolet wavelength range. (c) 2006 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9505
- DOI
- 10.1063/1.2360217
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 89, no. 14, 2006-10-02
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