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Cited 44 time in webofscience Cited 56 time in scopus
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dc.contributor.authorXi, JQ-
dc.contributor.authorOjha, M-
dc.contributor.authorPlawsky, JL-
dc.contributor.authorGill, WN-
dc.contributor.authorKim, JK-
dc.contributor.authorSchubert, EF-
dc.date.accessioned2015-06-25T01:11:21Z-
dc.date.available2015-06-25T01:11:21Z-
dc.date.created2009-09-07-
dc.date.issued2005-07-18-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000018793en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9483-
dc.description.abstractAn internal high-reflectivity omni-directional reflector (ODR) for the visible spectrum is realized by the combination of total internal reflection using a low-refractive-index (low-n) material and reflection from a one-dimensional photonic crystal (1D PC). The low-n layer limits the range of angles in the 1D PC to values below the Brewster angle, thereby enabling high reflectivity and omni-directionality. This ODR is demonstrated using GaP as ambient, nanoporous SiO2 with a very low refractive index (n = 1.10), and a four-pair TiO2/SiO2 multilayer stack. The results indicate a two orders of magnitude lower angle-integrated transverse-electric-transverse-magnetic polarization averaged mirror loss of the ODR compared with conventional distributed Bragg reflectors and metal reflectors. This indicates the high potential of the internal ODRs for optoelectronic semiconductor devices, e. g., light-emitting diodes. (c) 2005 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleInternal high-reflectivity omni-directional reflectors-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.1997270-
dc.author.googleXi, JQen_US
dc.author.googleOjha, Men_US
dc.author.googleSchubert, EFen_US
dc.author.googleKim, JKen_US
dc.author.googleGill, WNen_US
dc.author.googlePlawsky, JLen_US
dc.relation.volume87en_US
dc.relation.issue3en_US
dc.contributor.id10100864en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.87, no.3-
dc.identifier.wosid000230596000011-
dc.date.tcdate2019-01-01-
dc.citation.number3-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume87-
dc.contributor.affiliatedAuthorKim, JK-
dc.identifier.scopusid2-s2.0-24144485860-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc39-
dc.description.scptc49*
dc.date.scptcdate2018-06-152*
dc.type.docTypeArticle-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusSILICA XEROGEL FILMS-
dc.subject.keywordPlusDIELECTRICS-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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