Synthesis of Atomically Thin Transition Metal Ditelluride Films by Rapid Chemical Transformation in Solution Phase

Abstract

The controlled synthesis of large-area, atomically thin molybdenum and tungsten ditelluride (MoTe2 and WTe2 ) crystals is crucial for their emerging applications based on the attractive electronic properties. However, the solution phase synthesis of high-quality and large-area MoTe2 or WTe2 ultrathin films have not been achieved yet. In this study, we synthesized for the first time, large-area atomically thin MoTe2 and WTe2 films in solution phase, through rapid crystal formation directly on a conducting substrate. For the synthesis, we developed a new Te precursor. The crystal growth involves an in situ chemical transformation from Te nanoparticles into MoTe2 or WTe2 thin films. The synthesis enables precise control of the number of atomic layers over a large area, from a monolayer to multilayers. Micropatterned MoTe2 thin films are also readily synthesized in situ using the same process. The photodetector made of 3-layer semiconducting MoTe2 thin films exhibits high photoresponsivity (R-lambda) over a broad spectral range (300-1100 nm) with a maximum in the near-IR region, including a R lambda = 30 mA W-1 even at lambda = 1.10 mu m and a fast photoresponse (87 mu s). Our synthesis method presents a crucial step in the solution phase synthesis of metal telluride ultrathin films and paves the way for their large-scale emerging applications.