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Cited 5 time in webofscience Cited 6 time in scopus
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dc.contributor.authorChon, U-
dc.contributor.authorJang, HM-
dc.date.accessioned2015-06-25T01:09:30Z-
dc.date.available2015-06-25T01:09:30Z-
dc.date.created2012-06-12-
dc.date.issued2003-03-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000003234en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9454-
dc.description.abstractThe recovery of ferroelectric properties in the forming-gas-annealed Pt/Bi4-xLaxTi3O12/Pt (Pt/BLT/Pt) capacitor was studied by examining changes in ferroelectric responses, phase evolution, and spatial distributions of relevant species during the recovery annealing. The degraded ferroelectric properties were practically restored to their original values after the recovery annealing at 600 degreesC for 10 min in an O-2 atmosphere. The following recovery process has been delineated from the present study: (i) the removal of impregnated protons from the degraded capacitor due to the chemical potential difference of protons between the forming-gas-annealed capacitor and the contacting atmosphere, and (ii) the restoration of perovskite BLT phase with the help of replenishment of the Bi and oxygen losses via diffusion from the neighboring intact region to the Bi-depleted columnar region located beneath the top Pt electrode. (C) 2003 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.subjectHYDROGEN-INDUCED DEGRADATION-
dc.subjectBI3.25LA0.75TI3O12 THIN-FILMS-
dc.subjectPT/TI/SIO2/SI(100)-
dc.subjectMEMORIES-
dc.titleRecovery process of degraded ferroelectric properties in the forming-gas-annealed Pt/Bi4-xLaxTi3O12/Pt capacitor-
dc.typeArticle-
dc.contributor.college첨단재료과학부en_US
dc.identifier.doi10.1063/1.1558970-
dc.author.googleChon, Uen_US
dc.author.googleJang, HMen_US
dc.relation.volume82en_US
dc.relation.issue10en_US
dc.relation.startpage1577en_US
dc.relation.lastpage1579en_US
dc.contributor.id10084272en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.82, no.10, pp.1577 - 1579-
dc.identifier.wosid000181358200028-
dc.date.tcdate2019-01-01-
dc.citation.endPage1579-
dc.citation.number10-
dc.citation.startPage1577-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume82-
dc.contributor.affiliatedAuthorJang, HM-
dc.identifier.scopusid2-s2.0-0037429815-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc5-
dc.description.scptc6*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusHYDROGEN-INDUCED DEGRADATION-
dc.subject.keywordPlusBI3.25LA0.75TI3O12 THIN-FILMS-
dc.subject.keywordPlusPT/TI/SIO2/SI(100)-
dc.subject.keywordPlusMEMORIES-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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