DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, S | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Woo, J | - |
dc.contributor.author | Lee, D | - |
dc.contributor.author | Prakash, A | - |
dc.contributor.author | Hwang, H | - |
dc.date.accessioned | 2018-10-04T05:52:05Z | - |
dc.date.available | 2018-10-04T05:52:05Z | - |
dc.date.created | 2015-08-11 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 2162-8742 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/92384 | - |
dc.description.abstract | In this paper, we investigated the effects of inserting an N-doped GeSbTe buffer layer on a Cu/Al2O3-based conducting-bridge random-access memory (CBRAM). The N-doped GeSbTe buffer layer induced a limited Cu ion injection during the set process due to Cu-Te bonding and N-doping in the buffer layer. In addition, joule heating confinement resulting from the low-thermal-conductivity buffer layer led to a low-residual conductive filament after the reset process. As a result, the on/off ratio of the Cu/Al2O3-based device increased from 10(2) to 10(5). Furthermore, the variability of the switching parameters such as high-resistance state and set/reset voltages distributions was significantly mitigated. The N-doping effects were confirmed by comparing the GeSbTe and the N-doped GeSbTe buffer-layer-inserted devices. The N-doped GeSbTe-inserted CBRAM exhibited an on/off ratio of > 10(5) up to 300 DC cycles without any noticeable data-state degradation. (C) 2015 The Electrochemical Society. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | ECS SOLID STATE LETTERS | - |
dc.title | Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM | - |
dc.type | Article | - |
dc.identifier.doi | 10.1149/2.0011507SSL | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ECS SOLID STATE LETTERS, v.4, no.7, pp.Q25 - Q28 | - |
dc.identifier.wosid | 000356879700002 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | Q28 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | Q25 | - |
dc.citation.title | ECS SOLID STATE LETTERS | - |
dc.citation.volume | 4 | - |
dc.contributor.affiliatedAuthor | Prakash, A | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84929926659 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 7 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.