DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sung Hwan | - |
dc.contributor.author | Jin, Kyung-Hwan | - |
dc.contributor.author | Kho, Byung Woo | - |
dc.contributor.author | Park, Byeong-Gyu | - |
dc.contributor.author | Liu, Feng | - |
dc.contributor.author | Kim, Jun Sung | - |
dc.contributor.author | Yeom, Han Woong | - |
dc.date.accessioned | 2018-07-16T09:43:36Z | - |
dc.date.available | 2018-07-16T09:43:36Z | - |
dc.date.created | 2017-12-21 | - |
dc.date.issued | 2017-10 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/91996 | - |
dc.description.abstract | Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Unique electronic properties of a 'topological' p-n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p-n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p-n junction of topological surface states (TSS's) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS's as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic and spintronic devices based on well defined topological p-n junctions with the scalability down to atomic dimensions. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS Nano | - |
dc.subject | EXPERIMENTAL REALIZATION | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.subject | BI(111) BILAYER | - |
dc.subject | DIRAC CONE | - |
dc.subject | INSULATOR | - |
dc.subject | SURFACE | - |
dc.subject | PHASE | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | STATES | - |
dc.subject | TRANSITION | - |
dc.title | Atomically Abrupt Topological p-n Junction | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsnano.7b03880 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS Nano, v.11, no.10, pp.9671 - 9677 | - |
dc.identifier.wosid | 000413992800008 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 9677 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 9671 | - |
dc.citation.title | ACS Nano | - |
dc.citation.volume | 11 | - |
dc.contributor.affiliatedAuthor | Kim, Jun Sung | - |
dc.contributor.affiliatedAuthor | Yeom, Han Woong | - |
dc.identifier.scopusid | 2-s2.0-85033219409 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 5 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | EXPERIMENTAL REALIZATION | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | BI(111) BILAYER | - |
dc.subject.keywordPlus | DIRAC CONE | - |
dc.subject.keywordPlus | INSULATOR | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordAuthor | topological insulator | - |
dc.subject.keywordAuthor | topological p-n junction | - |
dc.subject.keywordAuthor | angle-resolved photoemission spectroscopy | - |
dc.subject.keywordAuthor | scanning tunneling microscopy/spectroscopy | - |
dc.subject.keywordAuthor | ultrathin Sb film | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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