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dc.contributor.author정윤하-
dc.date.accessioned2018-06-22T03:05:28Z-
dc.date.available2018-06-22T03:05:28Z-
dc.date.created2009-03-27-
dc.date.issued1994-11-01-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/86645-
dc.publisherThe Korean Sensor Society-
dc.relation.isPartOfProc. of 5th Conf. on Sensor Tech, KAIST-
dc.relation.isPartOfProc. of 5th Conf. on Sensor Tech, KAIST-
dc.titleHighlly sensitve AlGaAs/GaAs Hall sensors with Si-delta-doped AlAs/GaAs layer grown by LP-MOCVD-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationProc. of 5th Conf. on Sensor Tech, KAIST-
dc.citation.titleProc. of 5th Conf. on Sensor Tech, KAIST-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass2-
dc.description.journalClass2-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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