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Thesis
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dc.contributor.author손준호en_US
dc.date.accessioned2014-12-01T11:46:48Z-
dc.date.available2014-12-01T11:46:48Z-
dc.date.issued2010en_US
dc.identifier.otherOAK-2014-00339en_US
dc.identifier.urihttp://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000000790623en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/841-
dc.descriptionDoctoren_US
dc.languageengen_US
dc.publisher포항공과대학교en_US
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.title변형률 조절을 통한 수직구조 InGaN/GaN 발광다이오드 양자 효율 향상en_US
dc.typeThesisen_US
dc.contributor.college일반대학원 신소재공학과en_US
dc.date.degree2010- 8en_US
dc.type.docTypeThesis-

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