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dc.contributor.author김형준-
dc.date.accessioned2018-06-21T14:51:25Z-
dc.date.available2018-06-21T14:51:25Z-
dc.date.created2009-03-27-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/83735-
dc.publisher제주-
dc.relation.isPartOfThe 14th Korean Conference on Semiconductors-
dc.relation.isPartOfThe 14th Korean Conference on Semiconductor-
dc.titleElectrical properties improvements in high k dielectric by in situ nitridation during atomic layer deposition-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 14th Korean Conference on Semiconductors-
dc.citation.conferenceDate2007-02-08-
dc.citation.conferencePlaceKO-
dc.citation.titleThe 14th Korean Conference on Semiconductors-
dc.contributor.affiliatedAuthor김형준-
dc.description.journalClass2-
dc.description.journalClass2-

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김형준KIM, HYUNGJUN
Dept of Materials Science & Enginrg
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