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dc.contributor.author이정수-
dc.date.accessioned2018-06-18T11:19:23Z-
dc.date.available2018-06-18T11:19:23Z-
dc.date.created2014-08-05-
dc.date.issued2014-07-02-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/67148-
dc.publisherNano Korea symposium-
dc.relation.isPartOfThe 12th Nano Korea symposium-
dc.titleEffects of Grain Boundary Traps on Electrical Variation in 3D Vertical NAND Flash Memory Cell with Macaroni Channel Structure-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 12th Nano Korea symposium-
dc.citation.conferenceDate2014-07-02-
dc.citation.conferencePlaceKO-
dc.citation.titleThe 12th Nano Korea symposium-
dc.contributor.affiliatedAuthor이정수-
dc.description.journalClass1-
dc.description.journalClass1-

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이정수LEE, JEONG SOO
Dept of Electrical Enginrg
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