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dc.contributor.author정윤하-
dc.date.accessioned2018-06-18T04:57:39Z-
dc.date.available2018-06-18T04:57:39Z-
dc.date.created2012-04-27-
dc.date.issued2011-08-16-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/61506-
dc.publisherIEEE-
dc.relation.isPartOfInternational Conference on Nanotechnology-
dc.relation.isPartOf11TH IEEE INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY-
dc.titleFabrication and Characterization of Gate-All-Around Silicon Nanowire Field Effect Transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationInternational Conference on Nanotechnology-
dc.citation.conferencePlaceUS-
dc.citation.titleInternational Conference on Nanotechnology-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass1-
dc.description.journalClass1-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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