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dc.contributor.author이준환en_US
dc.date.accessioned2014-12-01T11:46:22Z-
dc.date.available2014-12-01T11:46:22Z-
dc.date.issued2010en_US
dc.identifier.otherOAK-2014-00110en_US
dc.identifier.urihttp://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000000552715en_US
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/612-
dc.descriptionMasteren_US
dc.description.abstractExtreme ultraviolet lithography (EUVL) using a light of 13.5nm wavelength is a leading candidate for 22nm lines and space (L/S) half pitch node and beyond. Its implementation into high-volume manufacturing has been investigated with alpha demo tool (ADT) at IMEC. Unlike current 193nm ArF lithography, transmissive optical components cannot be available in EUVL imaging systems. Only reflective optical components and masks are needed in EUVL, because a light of 13.5nm wavelength is not transmitted, but absorbed by most of materials. One of the critical issues in extreme ultraviolet lithography (EUVL) is flare, which is an integrated light scattering from surface roughness in the EUVL optical system. Flare degrades the control of critical dimension (CD) uniformity across the exposure field. Also, it generates larger CD sensitivity as line and space (L/S) half pitch size decreases. Therefore, we discussed the calculation of accurate fine-grid flare maps to compensate for flare variation. The influence of three-dimensional (3D) mask topography on flare was investigated with different absorber thicknesses, off-axis illumination angles, and azimuthal angles. Also, some types of dummy patterns were found to be effective in controlling the flare variation within a L/S patterned target and the average flare of a L/S patterned target. Our studies has definitely made progress in an effective flare variation compensation using a rule-based correction for sub-22nm L/S half pitch node and beyond.en_US
dc.languagekoren_US
dc.publisher포항공과대학교en_US
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.title차세대 극자외선 노광 기술에서의 Flare Effect에 관한 연구en_US
dc.typeThesisen_US
dc.contributor.college일반대학원 전자전기공학부en_US
dc.date.degree2010- 2en_US
dc.contributor.department포항공과대학교 전자전기공학과 미세소자연구실en_US

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