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dc.contributor.author조문호-
dc.date.accessioned2018-06-18T01:23:17Z-
dc.date.available2018-06-18T01:23:17Z-
dc.date.created2011-04-13-
dc.date.issued2010-07-27-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/58575-
dc.publisherInternational Conference on Physics of Semiconductors-
dc.relation.isPartOfThe 30th International Conference on Physics of Semiconductors-
dc.titleDiameter-dependent internal gain in ohmic Ge nanowire photodetectors-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 30th International Conference on Physics of Semiconductors-
dc.citation.conferenceDate2010-07-26-
dc.citation.conferencePlaceKO-
dc.citation.titleThe 30th International Conference on Physics of Semiconductors-
dc.contributor.affiliatedAuthor조문호-
dc.description.journalClass2-
dc.description.journalClass2-

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