DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, H. | - |
dc.contributor.author | Sun, F. | - |
dc.contributor.author | Song, Y. | - |
dc.contributor.author | Zhu, Y. | - |
dc.contributor.author | Kang, J. | - |
dc.contributor.author | Kim, H.-S. | - |
dc.date.accessioned | 2018-06-15T05:56:34Z | - |
dc.date.available | 2018-06-15T05:56:34Z | - |
dc.date.created | 2017-12-21 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1001-9731 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/51008 | - |
dc.description.abstract | Fluorescence characteristics of silicon carbide quantum dots(SiC-QDs) prepared by chemical corrosion method and labeling mechanism for the living cells of pathogenic fusarium were explored. The results indicate that SiC-QDs photoluminescence intensity reach the maximum value when excitation wavelength is 340nm. Red shift phenomenon of emission wavelength will occur with the excitation wavelength increasing. Because of larger Stokes shift and tunable color fluorescent, near ultraviolet detection for living cells with SiC-QDs fluorescent marking was achieved, which can effectively detect and quantitatively analyze the autofluorescence cells. The results of labeling mechanism for living cells of pathogenic fusarium with SiC-QDs exhibit that quantum dots can reach the cells interior through the clathrin endocytosis action, and achieve homogeneous distribution. So the living cells were marked with stably fluorescent labeling. Moreover, marking model for living cells with SiC-QDs was established based on the experimental results and theoretical analysis. ? 2017, Chongqing Functional Materials Periodical Press Co. Ltd. All right reserved. | - |
dc.language | Chinese | - |
dc.publisher | Chongging Yibiao Cailiao Yanjiusuo/Chongqing Instrument Materials Research Institute | - |
dc.relation.isPartOf | Gongneng Cailiao/Journal of Functional Materials | - |
dc.title | Fluorescence characteristics and labeling mechanism for living cells of pathogenic fusarium with silicon carbide quantum dots | - |
dc.type | Article | - |
dc.identifier.doi | 10.3969/j.issn.1001-9731.2017.05.034 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Gongneng Cailiao/Journal of Functional Materials, v.48, no.5, pp.5185 - 5189 | - |
dc.citation.endPage | 5189 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 5185 | - |
dc.citation.title | Gongneng Cailiao/Journal of Functional Materials | - |
dc.citation.volume | 48 | - |
dc.contributor.affiliatedAuthor | Kim, H.-S. | - |
dc.identifier.scopusid | 2-s2.0-85026880151 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Metals and alloys | - |
dc.subject.keywordAuthor | High-entropy alloy | - |
dc.subject.keywordAuthor | High-pressure torsion | - |
dc.subject.keywordAuthor | Microstructure | - |
dc.subject.keywordAuthor | Phase transformation | - |
dc.description.journalRegisteredClass | scopus | - |
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