DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jonghwan | - |
dc.contributor.author | Jin, Chenhao | - |
dc.contributor.author | Chen, Bin | - |
dc.contributor.author | Cai, Hui | - |
dc.contributor.author | Zhao, Tao | - |
dc.contributor.author | Lee, Puiyee | - |
dc.contributor.author | Kahn, Salman | - |
dc.contributor.author | Watanabe, Kenji | - |
dc.contributor.author | Taniguchi, Takashi | - |
dc.contributor.author | Tongay, Sefaattin | - |
dc.contributor.author | Crommie, Michael F. | - |
dc.contributor.author | Wang, Feng | - |
dc.date.accessioned | 2018-06-15T05:34:11Z | - |
dc.date.available | 2018-06-15T05:34:11Z | - |
dc.date.created | 2017-12-04 | - |
dc.date.issued | 2017-07 | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/50611 | - |
dc.description.abstract | The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe2/MoS2 heterostructures by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe2 layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 ms and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 mu s at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications. | - |
dc.language | English | - |
dc.publisher | American Association for the Advancement of Science | - |
dc.relation.isPartOf | Science advances | - |
dc.title | Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures | - |
dc.type | Article | - |
dc.identifier.doi | 10.1126/sciadv.1700518 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Science advances, v.3, no.7 | - |
dc.identifier.wosid | 000411588000049 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 7 | - |
dc.citation.title | Science advances | - |
dc.citation.volume | 3 | - |
dc.contributor.affiliatedAuthor | Kim, Jonghwan | - |
dc.identifier.scopusid | 2-s2.0-85030100721 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 5 | - |
dc.description.isOpenAccess | Y | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | MONOLAYER WSE2 | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | SPIN | - |
dc.subject.keywordPlus | OPTOELECTRONICS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | COHERENCE | - |
dc.subject.keywordPlus | DYNAMICS | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
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