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dc.contributor.author백록현-
dc.contributor.author사공현철-
dc.contributor.author이경택-
dc.contributor.author홍승호-
dc.contributor.author최현식-
dc.contributor.author최길복-
dc.contributor.author송승현-
dc.contributor.author박민상-
dc.contributor.author김재철-
dc.contributor.author박찬훈-
dc.contributor.author정성우-
dc.contributor.author강창용-
dc.contributor.author정윤하-
dc.date.accessioned2018-05-24T11:44:08Z-
dc.date.available2018-05-24T11:44:08Z-
dc.date.created2017-03-01-
dc.date.issued2009-02-18-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/49830-
dc.publisher대한전자공학회-
dc.relation.isPartOf16th Korean Conference on Semiconductors (2009)-
dc.relation.isPartOfPROCEEDINGS OF THE KOREAN CONFERENCE ON SEMICONDUCTORS(한국반도체학술대회)-
dc.titleRF characteristics in Metal Gate/High-K Dielectric nMOSFETs at cryogenic temperature-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation16th Korean Conference on Semiconductors (2009)-
dc.citation.conferencePlaceKO-
dc.citation.title16th Korean Conference on Semiconductors (2009)-
dc.contributor.affiliatedAuthor백록현-
dc.description.journalClass2-
dc.description.journalClass2-

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백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
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