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dc.contributor.author정윤하-
dc.date.accessioned2018-05-23T15:03:53Z-
dc.date.available2018-05-23T15:03:53Z-
dc.date.created2010-05-10-
dc.date.issued2007-11-02-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/46302-
dc.publisherKEES-
dc.relation.isPartOf2007 KEES Propagation and Optical Wave Conference-
dc.relation.isPartOf2007 KEES Propagation and Optical Wave Conference-
dc.titleExperimental Comparision of Memory Effects of Si LDMOSFET, GaN HEMT, and SiC MESFET Power Amplifiers with Analog Predistorter-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2007 KEES Propagation and Optical Wave Conference, pp.133 - 136-
dc.citation.conferenceDate2007-11-02-
dc.citation.endPage136-
dc.citation.startPage133-
dc.citation.title2007 KEES Propagation and Optical Wave Conference-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass2-
dc.description.journalClass2-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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