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dc.contributor.authorLEE, JANG SIK-
dc.contributor.authorDONG, SHIN KIM-
dc.contributor.author김민규-
dc.contributor.authorMasoud Akbari-
dc.date.accessioned2018-05-11T00:27:18Z-
dc.date.available2018-05-11T00:27:18Z-
dc.date.created2018-03-02-
dc.date.issued2017-11-24-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/42712-
dc.publisher한국전기전자재료학회-
dc.relation.isPartOfInternational Conference on Advanced Electromaterials 2017-
dc.relation.isPartOf.-
dc.titleImprovement of Resistive Switching Properties using Bilayer Structures by Atomic Layer Deposition-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationInternational Conference on Advanced Electromaterials 2017-
dc.citation.conferenceDate2017-11-21-
dc.citation.conferencePlaceKO-
dc.citation.titleInternational Conference on Advanced Electromaterials 2017-
dc.contributor.affiliatedAuthorLEE, JANG SIK-
dc.contributor.affiliatedAuthorDONG, SHIN KIM-
dc.contributor.affiliatedAuthor김민규-
dc.description.journalClass1-
dc.description.journalClass1-

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이장식LEE, JANG SIK
Dept of Materials Science & Enginrg
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