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dc.contributor.authorSON, JUNWOO-
dc.contributor.authorYOON, DASEOB-
dc.contributor.authorSANGBAE, YU-
dc.date.accessioned2018-05-11T00:18:43Z-
dc.date.available2018-05-11T00:18:43Z-
dc.date.created2018-03-05-
dc.date.issued2017-12-01-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/42665-
dc.publisherMaterials Research Society-
dc.relation.isPartOf2017 MRS Fall Meeting-
dc.relation.isPartOf.-
dc.titleOxygen-Vacancy-Assisted Recovery Process to Enhance Electron Mobility in N-Type BaSnO3 Epitaxial Thin Films.-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2017 MRS Fall Meeting-
dc.citation.conferenceDate2017-11-26-
dc.citation.conferencePlaceUS-
dc.citation.title2017 MRS Fall Meeting-
dc.contributor.affiliatedAuthorSON, JUNWOO-
dc.contributor.affiliatedAuthorYOON, DASEOB-
dc.contributor.affiliatedAuthorSANGBAE, YU-
dc.description.journalClass1-
dc.description.journalClass1-

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손준우SON, JUNWOO
Dept of Materials Science & Enginrg
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