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Showing results 1 to 1 of 1
Article
Low-temperature-processed polycrystalline silicon thin-film transistors using titanium disilicide contacts for source and drain
SCIE
SCOPUS
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, vol. 35, no. 5A, page. L538 - L540, 1996-05-01
Chang, SK
;
Kim, OY
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