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dc.contributor.authorKIM, JAE NAM-
dc.contributor.authorKIM, KYUNG JOONG-
dc.contributor.authorKIM, HYUN KYUNG-
dc.contributor.authorMOON, DAE WON-
dc.contributor.authorHONG, TAE EN-
dc.contributor.authorJEONG, CHIL SUNG-
dc.contributor.authorKIM, YI KYUNG-
dc.contributor.authorLIM CEOL HO-
dc.contributor.authorKIM, JEONG HO-
dc.date.accessioned2018-01-09T09:04:13Z-
dc.date.available2018-01-09T09:04:13Z-
dc.date.created2017-11-10-
dc.date.issued2002-12-
dc.identifier.issn2288-6559-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/40851-
dc.description.abstractA domestic round robin test(RRT) for the quantitative analysis of minor impurities was performed by a standard procedure and standard reference material. The certified reference material(CRM)s for B-doped Si thin film and analysis specimens and the analysis specimens were prepared by an ion beam sputter deposition method. These samples were certified by inductively coupled plasma mass spectrometry(ICP-MS) with isotope dilution method which is one of the most quantitative methods in chemical analysis. By using an international standard procedure(ISO/DIS-14237) for the quantitative analysis of B in Si by SIMS, a domestic RRT was performed for these specimens. Although only a few laboratories participated in this RRT, the average B concentration well agreed with the certified value within 2% error.-
dc.languageKorean-
dc.publisher한국진공학회-
dc.relation.isPartOf한국진공학회지-
dc.title실리콘에 도핑된 붕소의 정량분석에 대한 공동분석연구-
dc.title.alternativeRRT Study for the Quantitative Analysis of Boron in Silicon-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.bibliographicCitation한국진공학회지, v.11, no.4, pp.218 - 224-
dc.identifier.kciidART001204623-
dc.citation.endPage224-
dc.citation.number4-
dc.citation.startPage218-
dc.citation.title한국진공학회지-
dc.citation.volume11-
dc.contributor.affiliatedAuthorKIM, JAE NAM-
dc.description.journalClass2-
dc.description.journalClass2-
dc.type.docTypeARTICLE-

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