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HFO2/HFOXNY/HFO2 GATE DIELECTRIC FABRICATED BY IN SITU OXIDATION OF PLASMA-ENHANCED ATOMIC LAYER DEPOSITION HFN MIDDLE LAYERSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 8, page. G109 - G113, 2009-01

Article
Microstructural and electrical investigation of low resistance and thermally stable Pd/Ni contact on p-type GaNSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 150, no. 3, page. G212 - G215, 2003-03

Article
Hydrogen bubbles and the growth morphology of ramified zinc by electrodepositionSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 155, no. 5, page. D400 - D407, 2008-01

Article
GaN MSM ultraviolet photodetectors with transparent and thermally stable RuO2 and IrO2 Schottky contactsSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 151, no. 3, page. G190 - G195, 2004-03

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