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Department of Materials Science & Engineering (신소재공학과)
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Article
Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots
SCIE
SCOPUS
JOURNAL OF CRYSTAL GROWTH, vol. 275, no. 3-4, page. 415 - 421, 2005-03-01
Lim, JG
;
Park, YJ
;
Park, YM
;
Song, JD
;
Choi, WJ
;
Han, IK
;
Cho, WJ
;
Lee, JI
;
Kim, TW
;
Kim, HS
;
Park, CG
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1.3 MU-M
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atomic layer epitaxy
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CHEMICAL-VAPOR-DEPOSITION
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DEFECTS
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ENSEMBLES
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GAAS
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INGAAS
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ISLANDS
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nanostructures
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