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Article
Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device
SCIE
SCOPUS
NANOTECHNOLOGY, vol. 32, no. 31, 2021-07
Kim, Hyungwoo
;
Kashir, Alireza
;
Oh, Seungyeol
;
Jang, Hojung
;
Hwang, Hyunsang
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carbon contaminant
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ferroelectric property
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HFO2
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high remnant polarization
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high-pressure oxygen anneal
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