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Article
Investigation for the formation of polarization-induced two-dimensional electron gas in AlGaN/GaN heterostructure field effect transistorsSCIESCOPUS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 228, no. 2, page. 621 - 624, 2001-11

Article
Metal/GaN reaction chemistry and their electrical propertiesSCIESCOPUS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 241, no. 12, page. 2771 - 2774, 2004-10

Article
Microstructural investigation and magnetic properties of p-type GaN implanted with Mn+ ionsSCIESCOPUS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 234, no. 3, page. 943 - 946, 2002-12

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