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Department of Materials Science & Engineering (신소재공학과)
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Article
X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN
SCIE
SCOPUS
JOURNAL OF APPLIED PHYSICS, vol. 92, no. 11, page. 6671 - 6678, 2002-12-01
Rickert, KA
;
Ellis, AB
;
Kim, JK
;
Lee, JL
;
Himpsel, FJ
;
Dwikusuma, F
;
Kuech, TF
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GALLIUM NITRIDE
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INITIAL-STAGES
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INTERFACE
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MICROSTRUCTURE
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OHMIC CONTACTS
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RESISTIVITY
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SURFACE-TREATMENT
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