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Browsing "1. Journal Papers" by  Subjecthafnium compounds

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Article
Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectricSCIESCOPUS

Applied Physics Letters, vol. 97, no. 12, 2010-09-20

Article
Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layerSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 96, no. 8, 2010-02-22

Article
HFO2/HFOXNY/HFO2 GATE DIELECTRIC FABRICATED BY IN SITU OXIDATION OF PLASMA-ENHANCED ATOMIC LAYER DEPOSITION HFN MIDDLE LAYERSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 8, page. G109 - G113, 2009-01

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