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Browsing "1. Journal Papers" by JournalTechnical Digest - International Electron Devices Meeting, IEDM
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Showing results 1 to 1 of 1
Article
Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode
SCIE
SCOPUS
Technical Digest - International Electron Devices Meeting, IEDM, page. 10.5.1 - 10.5.4, 2013-12
Woo J.
;
Song J.
;
Moon K.
;
Lee J.H.
;
Cha E.
;
et al
1
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