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Article
Evidence for the formation of n(+)-GaAs layer in Pd/Ge ohmic contact to n-type GaAsSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 82, no. 11, page. 5460 - 5464, 1997-12-01

Article
Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistorSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 16, no. 5, page. 2725 - 2728, 1998-09

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