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Cited 22 time in webofscience Cited 25 time in scopus
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dc.contributor.authorJi-Hoon Lim-
dc.contributor.authorJun-Hyun Bae-
dc.contributor.authorJaemin Jang-
dc.contributor.authorHae-Kang Jung-
dc.contributor.authorHyunbae Lee-
dc.contributor.authorYongju Kim-
dc.contributor.authorByungsub Kim-
dc.contributor.authorSim, JY-
dc.contributor.authorPark, HJ-
dc.date.accessioned2017-07-19T12:32:03Z-
dc.date.available2017-07-19T12:32:03Z-
dc.date.created2016-02-18-
dc.date.issued2016-02-
dc.identifier.issn1549-7747-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/35984-
dc.description.abstractA feedback edge combiner is proposed for the duty-cycle corrector (DCC) of a delay locked loop (DLL) to increase the range of allowed input duty cycle. The feedback edge combiner generates the rising edge of a DCC output at the rising edge of an input clock. It generates the falling edge of the DCC output at the rising edge of a feedback clock that is a half-period-delayed signal of the DCC output. A dual-delay-line digitally controlled delay line (DCDL) is used for seamless boundary switching. The chip area of the DCDL is reduced by around 46% by employing the architecture of two short coarse delay lines followed by a fine phase mixer (FPM) and a long coarse delay line in series instead of the architecture of two long coarse delay lines followed by an FPM. The measurements on the chip fabricated in the 65-nm CMOS show the allowed input duty cycle in the range from 20% to 80%; root-mean-square and peak-to-peak jitters of 2.69 and 14.0 ps, respectively, at 2 GHz and 1.2 V; and the operating frequency range from 0.12 to 2.0 GHz at 1.2 V. The measured power consumption is 3.3 mW/GHz at 1.2 V. The chip area is 0.059 mm(2).-
dc.languageEnglish-
dc.publisherIEEE-
dc.relation.isPartOfIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS-
dc.titleA Delay Locked Loop With a Feedback Edge Combiner of Duty-Cycle Corrector With a 20%–80% Input Duty Cycle for SDRAMs-
dc.typeArticle-
dc.identifier.doi10.1109/TCSII.2015.2468911-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, v.63, no.2, pp.141 - 145-
dc.identifier.wosid000370533000005-
dc.date.tcdate2019-03-01-
dc.citation.endPage145-
dc.citation.number2-
dc.citation.startPage141-
dc.citation.titleIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS-
dc.citation.volume63-
dc.contributor.affiliatedAuthorJi-Hoon Lim-
dc.contributor.affiliatedAuthorSim, JY-
dc.contributor.affiliatedAuthorPark, HJ-
dc.identifier.scopusid2-s2.0-84962243263-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc12-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordAuthorDelay locked loop (DLL)-
dc.subject.keywordAuthorDDR type 4 (DDR4)-
dc.subject.keywordAuthordouble date rate (DDR) type 3 (DDR3)-
dc.subject.keywordAuthorduty-cycle corrector (DCC)-
dc.subject.keywordAuthorfeedback edge combiner-
dc.subject.keywordAuthorfine phase mixer (FPM)-
dc.subject.keywordAuthorsynchronous dynamic random access memory (SDRAM)-
dc.subject.keywordAuthorwide range-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-

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박홍준PARK, HONG JUNE
Dept of Electrical Enginrg
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