DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SH | - |
dc.contributor.author | Lee, JK | - |
dc.contributor.author | Jung, SW | - |
dc.contributor.author | Kim, DW | - |
dc.contributor.author | You, SJ | - |
dc.date.accessioned | 2017-07-19T12:14:41Z | - |
dc.date.available | 2017-07-19T12:14:41Z | - |
dc.date.created | 2016-01-15 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35498 | - |
dc.description.abstract | The charge-up simulation of the microscopic feature with SiO2 layer was investigated in various conditions of rf capacitive discharge by using the three-dimensional (3-D) particle-in-cell (PIC) charge-up simulation coupled with the one-dimensional (1-D) particle-in-cell Monte Carlo collision (PIC-MCC) simulation of rf capacitive argon discharge. The result showed that the charge-up effect on the microtrench was greatly influenced by the conditions of the gas pressure and the discharge voltage in rf capacitive discharge. Based on the analysis of the distributions of electrons and ions arriving at the substrate in various plasma conditions, the charge-up effect and its reduction mechanisms on the microtrench of capacitive discharge were discussed. This article is expected to provide qualitative and quantitative insight for the understanding of charging and its reduction mechanism on many plasma processes performed by the rf capacitive discharge. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.title | Self-consistent charge-up simulation for the microscopic feature of SiO2 layer in rf capacitive discharge | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/J.CAP.2015.08.012 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.15, no.11, pp.1463 - 1471 | - |
dc.identifier.wosid | 000361880900027 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.endPage | 1471 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1463 | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 15 | - |
dc.contributor.affiliatedAuthor | Lee, JK | - |
dc.identifier.scopusid | 2-s2.0-84942991670 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.description.scptc | 1 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | PIC-MCC simulation | - |
dc.subject.keywordAuthor | Charge-up simulation | - |
dc.subject.keywordAuthor | EEDF | - |
dc.subject.keywordAuthor | IEDF | - |
dc.subject.keywordAuthor | Plasma and sheath potential | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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